Department Of Defence Research And Development

Department Of Defence Research And Development has published Bids Are Invited For SIMS Analysis of AlGaN/InGaN/GaN Heterostructure - Comprehensive quantitative Secondary lon Mass Spectroscopy (SIMS) analysis of AlGaN/InGaN/GaN have to be conducted as per the following details: 1. Quantitative SIMS based depth profiling of ~4.0 micron thick AlGaN/InGaN/GaN Heterostructure as per the following details: S. No Specimen description Profile 01 Sample No-1(Profile 1): Quantitative SIMS analysis of AlGaN/InGaN/GaN Heterostructure on GaN Substrate Depth: 4.0 micron 01 Matrix Elements: Al,Ga & In Quantification: C, O, Si, H + Al,Ga and In 02 Sample No-1(Profile 2nd): Quantitative SIMS analysis of AlGaN/InGaN/GaN Heterostructure on GaN Substrate Depth: 4.0 micron 01 Matrix Elements: Al,Ga & In Quantification: Mg + Al, Ga and In 2. Sample size that will be provided: (1x1) cm 3. Different ion source to be used to profile Mg and other atoms. 4. Sample will be couriered to the firm and sample details will be shared on their official e-mail id. Vendor to provide detailed of e-mail id for this. 5. Vendor has to submit the sample analysis report within three weeks of receipt of the sample on e-mail, and courier the hard copy of the analysis report along with soft copy and CD to our official address along with the invoice. Total Quantity : 1. Last date of submission for this tender is 2024-09-20. This is a Laboratory Ionic Equipment tender in DELHI, Delhi